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AXT Inc AXTI.OQ (NASDAQ Stock Exchange Global Select Market)

4.35 USD
-0.05 (-1.14%)
As of Mar 22
chart
Previous Close 4.40
Open 4.37
Volume 72,567
3m Avg Volume 85,740
Today’s High 4.41
Today’s Low 4.28
52 Week High 9.35
52 Week Low 3.70
Shares Outstanding (mil) 39.98
Market Capitalization (mil) 173.93
Forward P/E 18.47
Dividend (Yield %) -- ( -- )

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RECOMMENDATION

Sell Hold Buy
1.80 Mean rating from 5 analysts

KEY STATS

Revenue (mm, USD)
FY18
102
FY17
99
FY16
81
EPS (USD)
FY18
0.235
FY17
0.250
FY16
0.164
*Note: Units in Millions of U.S. Dollars
**Note: Units in U.S. Dollars

KEY RATIOS

Price to Earnings (TTM)
vs sector
18.47
11.39
Price to Sales (TTM)
vs sector
1.70
24.61
Price to Book (MRQ)
vs sector
0.93
1.87
Price to Cash Flow (TTM)
vs sector
11.08
14.73
Total Debt to Equity (MRQ)
vs sector
0.00
17.06
LT Debt to Equity (MRQ)
vs sector
0.00
9.88
Return on Investment (TTM)
vs sector
5.87
16.32
Return on Equity (TTM)
vs sector
5.16
17.63

EXECUTIVE LEADERSHIP

Jesse Chen
Chairman of the Board, Since 2017
Salary: --
Bonus: --
Morris Young
Chief Executive Officer, Director, Since 2014
Salary: $412,308.00
Bonus: $320,889.00
Gary Fischer
Chief Financial Officer, Corporate Secretary, Since 2017
Salary: $279,616.00
Bonus: $136,320.00
David Chang
Independent Director, Since 2000
Salary: --
Bonus: --
Leonard LeBlanc
Independent Director, Since 2003
Salary: --
Bonus: --

COMPANY PROFILE

Sector: Technology
Industry: Semiconductors
Address:

4281 Technology Dr
FREMONT   CA   94538-6339

Phone: +1510.4384734
Site: www.axt.com/

AXT, Inc. (AXT) is a developer and producer of compound and single element semiconductor substrates, also known as wafers. The dominant substrates used in producing semiconductor chips and other electronic circuits are made from silicon. The Company is engaged in the design, development, manufacture and distribution of compound semiconductor substrates and sale of materials. The Company provides alternative or specialty materials in the form of substrates or wafers, including compound and single element substrates. Its compound substrates combine indium with phosphorous (InP) or gallium with arsenic (GaAs). Its single element substrates are made from germanium (Ge). The Company uses its Vertical Gradient Freeze (VGF) technique for growing single crystal Indium Phosphide (InP), Gallium Arsenide (GaAs) and Germanium (Ge) ingots used to produce wafers for diverse electronic and optoelectronic device and circuit applications.

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